Typical Characteristics (Q1 N-Channel) T J = 25°C unless otherwise noted
20
4.0
V GS = 10V
V GS = 6V
V GS = 4.5V
3.5
V GS = 3.5V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
15
10
PULSE DURATION = X μ s
DUTY CYCLE = X%MAX
3.0
2.5
V GS = 4V
V GS = 4.5V
5
0
V GS = 4V
V GS = 3.5V
2.0
1.5
1.0
0.5
V GS = 6V
V GS = 10V
0
1
2
3
4
0
5
10
15
20
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
2.2
I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
300
2.0
I D = 4.3A
V GS = 10V
I D = 4.3A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
1.8
1.6
1.4
1.2
1.0
0.8
0.6
200
100
T J = 125 o C
T J = 25 o C
0.4
-75
-50
-25 0 25 50 75 100 125 150
0
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
20
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
20
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
10
V GS = 0V
15
10
V DS = 5V
T J = 150 o C
1
0.1
T J = 150 o C
T J = 25 o C
T J = 25 o C
5
0
T J = -55 o C
0.01
0.001
T J = -55 o C
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDD3510H Rev.C
4
www.fairchildsemi.com
相关PDF资料
FDD3670 MOSFET N-CH 100V 34A D-PAK
FDD3672_F085 MSOFET N-CH 100V 44A DPAK-3
FDD3672 MOSFET N-CH 100V 44A D-PAK
FDD3680 MOSFET N-CH 100V 25A D-PAK
FDD3682_F085 MOSFET N-CH 100V 32A DPAK
FDD3690 MOSFET N-CH 100V 22A D-PAK
FDD3860 MOSFET N-CH 100V 6.2A DPAK
FDD390N15ALZ MOSFET N-CH 150V 26A DPAK-3
相关代理商/技术参数
FDD3570 功能描述:MOSFET 80V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD3570_0011 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:80V N-Channel PowerTrench MOSFET
FDD3580 功能描述:MOSFET 80V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD3670 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD3670_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V N-Channel PowerTrench MOSFET
FDD3672 功能描述:MOSFET 100V 44a .28 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD3672_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -14A, 64mΩ
FDD3672_11 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ